RESUME AND JOB
Northrop Grumman
Developing PECVD processes for new materials. Developing new PECVD processes for emerging technologies in both microelectronics and superconducting electronics. Supporting statistical process control (SPC) and continuous improvement efforts Performing all other related duties as assigned Bachelor of Science in Electrical Engineering, Chemical Engineering, Materials Engineering, Chemistry, Physics or any related STEM degree with 2years relevant industry experience (Masters with 0yrs exp) Hands-on experience running PECVD/Diffusion process equipment and with process sustaining/development activities. Experience with thin film characterization equipment and techniques Must be able to work a large percentage of time working in a Class 100 cleanroom environment. Must be able to work the 2nd shift, covering at a minimum Monday - Friday 2pm-11pm. Must be able to obtain and maintain a Secret clearance. US Citizenship required. Basic Qualifications for Principal Plasma Enhanced Chemical Vapor Deposition (PECVD) Semiconductor Process Engineer:
Bachelor of Science in Electrical Engineering, Chemical Engineering, Materials Engineering, Chemistry, Physics or any related STEM degree with 5 years relevant industry experience (Masters with 3 yrs exp or PhD with 1 yr exp) Hands-on experience running PECVD/Diffusion process equipment and with process sustaining/development activities. Experience with thin film characterization equipment and techniques Must be able to work a large percentage of time working in a Class 100 cleanroom environment. Must be able to work the 2nd shift, covering at a minimum Monday - Friday 2pm-11pm. Must be able to obtain and maintain a Secret clearance. US Citizenship required. Direct experience with semiconductor fabrication, working in a cleanroom environment. Demonstrated ability to communicate well with others and work independently Excellent project management skills with demonstrated ability to identify manufacturing improvements, manage change, and implement solutions. Experience in structured problem-solving methodology to troubleshoot tool and process issues. Data analysis and visualization (JMP and/or MiniTab). Active Secret clearance. NGMCFab Primary Level Salary Range: $87,600.00 - $131,400.00 Secondary Level Salary Range: $108,800.00 - $163,200.00 The above salary range represents a general guideline; however, Northrop Grumman considers a number of factors when determining base salary offers such as the scope and responsibilities of the position and the candidate's experience, education, skills and current market conditions. Depending on the position, employees may be eligible for overtime, shift differential, and a discretionary bonus in addition to base pay. Annual bonuses are designed to reward individual contributions as well as allow employees to share in company results. Employees in Vice President or Director positions may be eligible for Long Term Incentives. In addition, Northrop Grumman provides a variety of benefits including health insurance coverage, life and disability insurance, savings plan, Company paid holidays and paid time off (PTO) for vacation and/or personal business. The application period for the job is estimated to be 20 days from the job posting date. However, this timeline may be shortened or extended depending on business needs and the availability of qualified candidates. Northrop Grumman is an Equal Opportunity Employer, making decisions without regard to race, color, religion, creed, sex, sexual orientation, gender identity, marital status, national origin, age, veteran status, disability, or any other protected class. For our complete EEO and pay transparency statement, please visit http://www.northropgrumman.com/EEO. U.S. Citizenship is required for all positions with a government clearance and certain other restricted positions.
125,000 - 185,000 USD / yearly
Source: rule based estimated
* This is an estimated range based on market data and may vary based on experience and qualifications.
Get personalized recommendations to optimize your resume specifically for Plasma Enhanced CVD Semiconductor Process Engineer / Principal Plasma Enhanced CVD Semiconductor Process Engineer 2nd shift. Takes only 15 seconds!
Find out how well your resume matches this job's requirements. Get comprehensive analysis including ATS compatibility, keyword matching, skill gaps, and personalized recommendations.
Answer 10 quick questions to check your fit for Plasma Enhanced CVD Semiconductor Process Engineer / Principal Plasma Enhanced CVD Semiconductor Process Engineer 2nd shift @ Northrop Grumman.

No related jobs found at the moment.

© 2026 Pointers. All rights reserved.

Northrop Grumman
Developing PECVD processes for new materials. Developing new PECVD processes for emerging technologies in both microelectronics and superconducting electronics. Supporting statistical process control (SPC) and continuous improvement efforts Performing all other related duties as assigned Bachelor of Science in Electrical Engineering, Chemical Engineering, Materials Engineering, Chemistry, Physics or any related STEM degree with 2years relevant industry experience (Masters with 0yrs exp) Hands-on experience running PECVD/Diffusion process equipment and with process sustaining/development activities. Experience with thin film characterization equipment and techniques Must be able to work a large percentage of time working in a Class 100 cleanroom environment. Must be able to work the 2nd shift, covering at a minimum Monday - Friday 2pm-11pm. Must be able to obtain and maintain a Secret clearance. US Citizenship required. Basic Qualifications for Principal Plasma Enhanced Chemical Vapor Deposition (PECVD) Semiconductor Process Engineer:
Bachelor of Science in Electrical Engineering, Chemical Engineering, Materials Engineering, Chemistry, Physics or any related STEM degree with 5 years relevant industry experience (Masters with 3 yrs exp or PhD with 1 yr exp) Hands-on experience running PECVD/Diffusion process equipment and with process sustaining/development activities. Experience with thin film characterization equipment and techniques Must be able to work a large percentage of time working in a Class 100 cleanroom environment. Must be able to work the 2nd shift, covering at a minimum Monday - Friday 2pm-11pm. Must be able to obtain and maintain a Secret clearance. US Citizenship required. Direct experience with semiconductor fabrication, working in a cleanroom environment. Demonstrated ability to communicate well with others and work independently Excellent project management skills with demonstrated ability to identify manufacturing improvements, manage change, and implement solutions. Experience in structured problem-solving methodology to troubleshoot tool and process issues. Data analysis and visualization (JMP and/or MiniTab). Active Secret clearance. NGMCFab Primary Level Salary Range: $87,600.00 - $131,400.00 Secondary Level Salary Range: $108,800.00 - $163,200.00 The above salary range represents a general guideline; however, Northrop Grumman considers a number of factors when determining base salary offers such as the scope and responsibilities of the position and the candidate's experience, education, skills and current market conditions. Depending on the position, employees may be eligible for overtime, shift differential, and a discretionary bonus in addition to base pay. Annual bonuses are designed to reward individual contributions as well as allow employees to share in company results. Employees in Vice President or Director positions may be eligible for Long Term Incentives. In addition, Northrop Grumman provides a variety of benefits including health insurance coverage, life and disability insurance, savings plan, Company paid holidays and paid time off (PTO) for vacation and/or personal business. The application period for the job is estimated to be 20 days from the job posting date. However, this timeline may be shortened or extended depending on business needs and the availability of qualified candidates. Northrop Grumman is an Equal Opportunity Employer, making decisions without regard to race, color, religion, creed, sex, sexual orientation, gender identity, marital status, national origin, age, veteran status, disability, or any other protected class. For our complete EEO and pay transparency statement, please visit http://www.northropgrumman.com/EEO. U.S. Citizenship is required for all positions with a government clearance and certain other restricted positions.
125,000 - 185,000 USD / yearly
Source: rule based estimated
* This is an estimated range based on market data and may vary based on experience and qualifications.
Get personalized recommendations to optimize your resume specifically for Plasma Enhanced CVD Semiconductor Process Engineer / Principal Plasma Enhanced CVD Semiconductor Process Engineer 2nd shift. Takes only 15 seconds!
Find out how well your resume matches this job's requirements. Get comprehensive analysis including ATS compatibility, keyword matching, skill gaps, and personalized recommendations.
Answer 10 quick questions to check your fit for Plasma Enhanced CVD Semiconductor Process Engineer / Principal Plasma Enhanced CVD Semiconductor Process Engineer 2nd shift @ Northrop Grumman.

No related jobs found at the moment.

© 2026 Pointers. All rights reserved.